H10D 84/153
The built-in component being pn junction diodes
Official title: {the built-in component being PN junction diodes}
H10D84/153 (The built-in component being pn junction diodes) appears on 112 US grants and 127 published applications in this corpus.
Search patents in H10D- Granted patents
- 112
- Published applications
- 127
- Assignees
- 60
- Inventors
- 223
- Latest grant
- 14 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 1 |
| 2002 | 0 | 2 |
| 2003 | 3 | 1 |
| 2004 | 1 | 1 |
| 2005 | 1 | 1 |
| 2006 | 2 | 6 |
| 2007 | 1 | 4 |
| 2008 | 1 | 3 |
| 2009 | 4 | 0 |
| 2010 | 4 | 2 |
| 2011 | 1 | 1 |
| 2012 | 1 | 2 |
| 2013 | 0 | 3 |
| 2014 | 2 | 9 |
| 2015 | 9 | 8 |
| 2016 | 10 | 10 |
| 2017 | 8 | 8 |
| 2018 | 7 | 7 |
| 2019 | 10 | 10 |
| 2020 | 9 | 9 |
| 2021 | 9 | 4 |
| 2022 | 8 | 9 |
| 2023 | 4 | 7 |
| 2024 | 8 | 4 |
| 2025 | 1 | 7 |
| 2026 | 4 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Rectifier14 Apr 2026US 12,603,585 B2Rohm Co., Ltd.
- Semiconductor structures and methods of manufacturing semiconductor structures24 Mar 2026US 12,588,274 B2Semiconductor Components Industries, LLC
- Transistor assemblies with gate current shunting capability, and associated methods10 Mar 2026US 12,574,025 B2Analog Devices, Inc.
- Semiconductor device with bootstrap diode13 Jan 2026US 12,527,074 B2SK keyfoundry Inc.
- Electrostatic discharge guard ring with snapback protection17 Jun 2025US 12,336,299 B2Texas Instruments Incorporated
- Rectifier23 Jul 2026US 2026/0213673 A1Rohm Co., Ltd.
- Semiconductor structures and methods of manufacturing semiconductor structures16 Jul 2026US 2026/0206295 A1Semiconductor Components Industries, LLC
- Transistor assemblies with gate current shunting capability, and associated methods2 Jul 2026US 2026/0189227 A1Analog Devices, Inc.
- High power switch with improved avalanche breakdown voltage using well blocking11 Jun 2026US 2026/0164765 A1NXP USA, Inc.
- Semiconductor device30 Apr 2026US 2026/0123056 A1Sanken Electric Co., Ltd.
Most cited
By later US patents
- Drain-extended MOS transistors with diode clamp and methods for making the same57US 7,187,033 B2Texas Instruments Incorporated · 2007
- Isolated high voltage PMOS transistor34US 6,750,489 B1Foveon, Inc. · 2004
- Trench structure having one or more diodes embedded therein adjacent a PN junction34US 7,132,712 B2Fairchild Semiconductor Corporation · 2006
- MIS semiconductor device with low on resistance and high breakdown voltage25US 6,525,390 B2Fuji Electric Co., Ltd. · 2003
- Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction25US 7,582,519 B2Fairchild Semiconductor Corporation · 2009