Semiconductor structures and methods of manufacturing semiconductor structures

A semiconductor structure, comprising:

• a body of semiconductor material comprising a first conductivity type, a first side, and a second side opposite to the first side;
• a first doped region within the body of semiconductor spaced apart from the first side and comprising a second conductivity type opposite the first conductivity type;
• a first semiconductor device at least partially in a first portion of the body of semiconductor material between the first doped region and the first side and comprising:
• a second doped region comprising the second conductivity type adjacent to the first side;
• a first current carrying region comprising the second conductivity type within the second doped region;
• a third doped region comprising the first conductivity type adjacent to the first side and laterally spaced apart from the second doped region;
• a second current carrying region within the third doped region;
• and
• a fourth doped region comprising the first conductivity type vertically interposed between the second doped region and the first doped region;
• and
• a second semiconductor device in a second portion of the body of semiconductor material between the first doped region and the first side and comprising:
• a fifth doped region comprising the first conductivity type;
• and
• a sixth doped region comprising the second conductivity type;
• wherein:
• the fifth doped region and the sixth doped region comprise a first PN diode;
• the fifth doped region is coupled to the first current carrying region;
• and
• the sixth doped region is coupled to the first doped region.

A method for making a semiconductor structure, comprising:

• providing a region of semiconductor material comprising a first conductivity type, a first side, and a second side opposite to the first side;
• providing a first doped region comprising a second conductivity type opposite to the first conductivity type within the region of semiconductor material spaced apart from the first side at a first depth;
• providing a semiconductor device comprising at least a first part in a first portion of the region of semiconductor material between the first doped region and the first side and comprising a first current carrying region of the second conductivity type and a second current carrying region;
• and
• providing a PN diode in a second portion of the region of semiconductor material and comprising an anode region of the first conductivity type and a cathode region of the second conductivity type;
• wherein:
• the anode region is coupled to the first current carrying region of the semiconductor device;
• the cathode region is coupled to the first doped region;
• and
• the first doped region is configured to suppress current injection from the semiconductor device into the region of semiconductor material below the first doped region in response to a forward bias applied to the first current carrying region.