Monolithic semiconductor switching device
AssigneeThe Board of Trustees of the Leland Stanford Junior University
InventorJames D. Plummer
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Abstract
An electrical circuit device made in integrated monolithic form has low level operating characteristics of a MOS device and high level operating characteristics of a Triac. The structure includes two double diffused MOS transistors which have merged drain regions. At higher voltage and current levels a lateral Triac structure is triggered by the MOS devices. Alternatively, separate terminal contacts can be made to the P and N regions comprising the MOS transistor source and channel regions with the Triac triggered conventionally by an externally applied control voltage.
Claims25
A monolithic semiconductor device comprising:
- a semiconductor body having at least one major surface and
- a body region adjacent to said surface of one conductivity type, first and second spaced regions of opposite conductivity type formed in said body region and abutting said major surface, third and fourth regions of said one conductivity type formed in said first and second regions, respectively, abutting said major surface and defining first and second channel regions in said first and second regions, respectively,
- a layer of insulation on said major surface,
- a gate electrode formed on said layer of insulation and above said first and second channel regions, an ohmic contact to said first and third regions, and an ohmic contact to said second and fourth regions.
An electrical circuit device comprising:
- a first double diffused field effect transistor having source, gate, and drain regions,
- a second double diffused field effect transistor having source, gate, and drain regions,
- means ohmically connecting said drain regions, contact means for said gate regions,
- an ohmic contact to said source region of said first field effect transistor, and
- an ohmic contact to said source region of said second field effect transistor.
A monolithic body having a plurality of isolated semiconductor regions of one conductivity type abutting a major surface of said body, each region including an electrical device comprising
- first and second spaced regions of opposite conductivity type,
- third and fourth regions of said one conductivity type formed in said first and second regions, respectively, and defining first and second channel regions in said first and second regions, respectively,
- a layer of insulation on the surface of said semiconductor region,
- a gate electrode formed on said layer of insulation and adjacent to said first and second channel regions,
- an ohmic contact to said first and third regions, and
- an ohmic contact to said second and fourth regions.
A monolithic semiconductor device comprising:
- a semiconductor substrate of one conductivity type, an epitaxial layer of opposite conductivity type, said epitaxial layer having a major surface, isolation means extending through said epitaxial layer and defining at least two isolated regions in said epitaxial layer,
- one of said isolated regions including
- a first double diffused field effect transistor having source, gate, and drain regions,
- a second double diffused field effect transistor having source, gate, and drain regions,
- means ohmically connecting said drain regions,
- contact means for said gate regions,
- an ohmic contact to said source region of said first field effect transistor, and
- an ohmic contact to said source region of said second field effect transistor,
- another of said isolated regions including
- a third field effect transistor having source, gate, and drain regions, and
- means electrically connecting said source region of said third transistor and said source region of said second transistor, said source region of said first transistor functions as an anode, said connected source regions of said second and third transistor function as a cathode, said gate regions of said first and second transistors function as an on gate, and said gate of said third field effect transistor functions as an off gate.
Dependencies are inferred from the claim text.