H10D 84/201
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting
Official title: {characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits}
H10D84/201 (Integrated devices formed in or on semiconductor substrates that comprise only semiconducting) appears on 2,943 US grants and 2,907 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,943
- Published applications
- 2,907
- Assignees
- 679
- Inventors
- 4,940
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 15 | 0 |
| 1977 | 19 | 0 |
| 1978 | 6 | 0 |
| 1979 | 5 | 0 |
| 1980 | 13 | 0 |
| 1981 | 8 | 0 |
| 1982 | 7 | 0 |
| 1983 | 7 | 0 |
| 1984 | 8 | 0 |
| 1985 | 12 | 0 |
| 1986 | 7 | 0 |
| 1987 | 10 | 0 |
| 1988 | 13 | 0 |
| 1989 | 6 | 0 |
| 1990 | 9 | 0 |
| 1991 | 9 | 0 |
| 1992 | 15 | 0 |
| 1993 | 15 | 0 |
| 1994 | 6 | 0 |
| 1995 | 16 | 0 |
| 1996 | 6 | 0 |
| 1997 | 20 | 0 |
| 1998 | 34 | 0 |
| 1999 | 26 | 0 |
| 2000 | 45 | 0 |
| 2001 | 81 | 32 |
| 2002 | 96 | 128 |
| 2003 | 117 | 131 |
| 2004 | 133 | 165 |
| 2005 | 132 | 196 |
| 2006 | 131 | 169 |
| 2007 | 120 | 188 |
| 2008 | 112 | 145 |
| 2009 | 107 | 116 |
| 2010 | 131 | 116 |
| 2011 | 96 | 68 |
| 2012 | 94 | 79 |
| 2013 | 103 | 118 |
| 2014 | 110 | 110 |
| 2015 | 120 | 141 |
| 2016 | 147 | 116 |
| 2017 | 121 | 89 |
| 2018 | 102 | 112 |
| 2019 | 100 | 95 |
| 2020 | 103 | 110 |
| 2021 | 74 | 81 |
| 2022 | 52 | 68 |
| 2023 | 66 | 93 |
| 2024 | 70 | 77 |
| 2025 | 57 | 94 |
| 2026 | 31 | 70 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Self-clamping resistor and circuit for transistor linear region current matching6 Oct 2026US 12,757,478 B2Texas Instruments Incorporated
- Semiconductor device and semiconductor package including the same29 Sep 2026US 12,751,299 B2Samsung Electronics Co., Ltd.
- Sense resistor25 Aug 2026US 12,720,681 B2Analog Devices International Unlimited Company
- Thermistor integrated with a bias resistor30 Jun 2026US 12,671,018 B2Texas Instruments Incorporated
- Semiconductor device23 Jun 2026US 12,666,630 B2Rohm Co., Ltd.
- Decoupling finfet capacitors8 Oct 2026US 2026/0313922 A1Taiwan Semiconductor Manufacturing Company.Ltd
- A Multi-Layer Deep-Trench Capacitor8 Oct 2026US 2026/0313925 A1Lotus Microsystems Aps
- Electronic circuit comprising transistor and resistor8 Oct 2026US 2026/0314039 A1Pragmatic Semiconductor Limited
- Structure and method to provide capacitive junction with contact bars of different depths24 Sep 2026US 2026/0293171 A1Globalfoundries Singapore Pte. Ltd.
- Semiconductor device including deep trench capacitor24 Sep 2026US 2026/0293290 A1DB HiTek Co., Ltd.
Most cited
By later US patents
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006
- System and method for dual-band antenna matching340US 7,180,467 B2Kyocera Wireless Corp. · 2007
- Tunable horn antenna238US 6,867,744 B2Kyocera Wireless Corp. · 2005
- Top layers of metal for high performance IC's207US 6,383,916 B12002
- Configurable integrated circuit capacitor array using via mask layers196US 7,335,966 B2Triad Semiconductor, Inc. · 2008