Self-clamping resistor and circuit for transistor linear region current matching
AssigneeTexas Instruments Incorporated
InventorsZachary Lee, Wenyuan Sun
Life of this patent
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Abstract
An electronic device includes a resistor with a drift region having majority carrier dopants of a first conductivity type and resistor terminals including first and second implanted wells with majority carrier dopants of the first conductivity type along laterally opposite sides of the drift region in a semiconductor layer, and a diode integrated with the resistor and including majority carrier dopants of a second conductivity type in the semiconductor layer adjacent one of the first and second implanted wells to limit a voltage across the resistor.
Claims24
An electronic device, comprising:
- a semiconductor layer,
- a resistor in the semiconductor layer;
- and
- a diode in the semiconductor layer, wherein at least a portion of the resistor includes or forms a p-n junction of the diode, and wherein the resistor and the diode are connected in parallel.
A circuit, comprising:
- a p-channel metal-oxide-semiconductor field effect transistor (MOSFET);
- an n-channel MOSFET;
- a resistor having first and second terminals, the first terminal coupled to a drain of the p-channel MOSFET, and the second terminal coupled to a drain of the n-channel MOSFET;
- and
- a diode integrated with the resistor in a semiconductor layer and coupled in parallel, wherein at least a portion of the resistor includes or forms a p-n junction of the diode.
A method of fabricating an electronic device, the method comprising:
- forming a resistor in a semiconductor layer, including:
- forming a doped region including majority dopants of a first conductivity type in the semiconductor layer;
- forming first and second wells including majority carrier dopants of the first conductivity type in the semiconductor layer, the first and second wells extending to respective laterally opposite sides of the doped region;
- and
- forming first and second regions including majority dopants of the first conductivity type, the first region extending in the first well, and the second region extending in the second well;
- and
- forming a diode in the semiconductor layer, wherein at least a portion of the resistor includes or forms a p-n junction of the diode.
Dependencies are inferred from the claim text.