Structure and method to provide capacitive junction with contact bars of different depths
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsYong Wah See, Guowei Zhang, Ee Jan Khor
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AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsYong Wah See, Guowei Zhang, Ee Jan Khor
Estimating the term…
The disclosure relates to structures and methods to provide a capacitive junction with contact bars of different depths. A structure of the disclosure includes a first capacitor electrode, including a first contact bar. The first contact bar extends a first depth through an insulator layer from a lower surface of a first wire to an upper surface of an insulative component on a substrate. A second capacitor electrode includes a second contact bar parallel to the first contact bar. The second contact bar extends a second depth from a lower surface of a second wire to an upper surface of a conductive component on the substrate. The first depth and the second depth are different.
A structure comprising:
A structure comprising:
A method comprising:
Dependencies are inferred from the claim text.