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US 12,666,630 B2Granted
Semiconductor device
AssigneeRohm Co., Ltd.
InventorsMasahiko Arimura, Daiki Yanagishima
Life of this patent
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Abstract
This semiconductor device is provided with: a high-voltage die pad and a low-voltage die pad, which are insulated from each other; a resistive element which is mounted on the high-voltage die pad; and a semiconductor element which is mounted on the low-voltage die pad. The resistive element is provided with: a substrate which is mounted on the high-voltage die pad; an insulating layer which is formed on the substrate; and a thin film resistive layer which is formed on the insulating layer.
Claims18
A semiconductor device, comprising:
- a first conductive layer and a second conductive layer that are insulated from each other;
- a resistive element mounted on the first conductive layer;
- and
- a semiconductor element mounted on the second conductive layer,
- wherein the resistive element includes:
- a substrate mounted on the first conductive layer;
- an insulation layer formed on the substrate;
- a thin film resistive layer formed on the insulation layer;
- a head surface;
- and
- electrodes formed on the head surface,
- wherein the electrodes are formed on the head surface separated from each other and electrically connected to the thin film resistive layer.
9 more elements
Dependencies are inferred from the claim text.