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US 12,671,018 B2Granted
Thermistor integrated with a bias resistor
AssigneeTexas Instruments Incorporated
InventorMark Robert Visokay
Life of this patent
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Abstract
An electronic device including a thermistor and a bias reference resistor in a voltage divider configuration integrated into a single die and a method of fabricating the same. In an example, the electronic device comprises a substrate including an n-well region, a thermistor formed in the n-well region, and a bias resistor connected in series to the thermistor, the bias resistor formed in a region of the substrate isolated from the n-well region.
Claims20
An electronic device, comprising:
- a substrate including an n-well region;
- a thermistor formed in the n-well region;
- and
- a bias resistor connected in series to the thermistor, the bias resistor formed in a region of the substrate isolated from the n-well region.
1 more element
A method of fabricating an electronic device, comprising:
- forming voltage divider over a semiconductor substrate, including:
- forming a thermistor in an n-well region extending into the semiconductor substrate;
- forming a bias resistor over a region of the semiconductor substrate conductively isolated from the n-well region;
- and
- connecting the thermistor and the bias resistor in series between a first reference voltage rail of the electronic device and a second reference voltage rail of the electronic device.
2 more elements
An integrated circuit, comprising:
- a semiconductor substrate die;
- a field dielectric layer on the substrate die;
- an n-well region in the substrate die;
- a first resistor including a polysilicon body formed on the field dielectric layer;
- a second resistor formed in the n-well region;
- and
- conductive interconnections that connect the first resistor and the second resistor in series between a first terminal and a second terminal.
4 more elements
Dependencies are inferred from the claim text.