H10D 84/891
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting
Official title: {characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID}
H10D84/891 (Integrated devices formed in or on semiconductor substrates that comprise only semiconducting) appears on 146 US grants and 14 published applications in this corpus.
Search patents in H10D- Granted patents
- 146
- Published applications
- 14
- Assignees
- 46
- Inventors
- 213
- Latest grant
- 15 Apr 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 13 | 0 |
| 1977 | 13 | 0 |
| 1978 | 13 | 0 |
| 1979 | 12 | 0 |
| 1980 | 13 | 0 |
| 1981 | 17 | 0 |
| 1982 | 10 | 0 |
| 1983 | 6 | 0 |
| 1984 | 5 | 0 |
| 1985 | 3 | 0 |
| 1986 | 5 | 0 |
| 1987 | 6 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 0 | 0 |
| 1993 | 5 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 2 |
| 2009 | 0 | 2 |
| 2010 | 1 | 1 |
| 2011 | 3 | 0 |
| 2012 | 1 | 1 |
| 2013 | 1 | 1 |
| 2014 | 1 | 0 |
| 2015 | 1 | 1 |
| 2016 | 0 | 0 |
| 2017 | 0 | 1 |
| 2018 | 0 | 0 |
| 2019 | 1 | 1 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 0 | 0 |
| 2023 | 0 | 2 |
| 2024 | 1 | 0 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Subgroups
Granted patents
Recent patents
- Semiconductor device15 Apr 2025US 12,277,983 B2Sony Group Corporation
- Photoelectric computing unit, photoelectric computing array, and photoelectric computing method31 Dec 2024US 12,181,908 B2Nanjing University
- Voltage to current converter20 Aug 2019US 10,386,874 B2Kabushiki Kaisha Toshiba
- Matrix image sensor providing bidirectional charge transfer with asymmetric gates28 Jul 2015US 9,093,353 B2E2V Semiconductors
- Shift register memory14 Jan 2014US 8,629,492 B2Kabushiki Kaisha Toshiba
- Semiconductor device14 Dec 2023US 2023/0402119 A1Sony Group Corporation
- 3d integrated charge-coupled device memory and method of fabricating the same17 Aug 2023US 2023/0262996 A1Imec Vzw
- Photoelectric computing unit, photoelectric computing array, and photoelectric computing method9 Dec 2021US 2021/0382516 A1Nanjing University
- Voltage to current converter24 Oct 2019US 2019/0324482 A1Kabushiki Kaisha Toshiba
- Voltage to current converter14 Sep 2017US 2017/0262005 A1Kabushiki Kaisha Toshiba
Most cited
By later US patents
- Method for forming a semiconductor device73US 6,344,413 B12002
- Integrated cellular array parallel processor69US 4,468,727 AHoneywell Inc. · 1984
- Charge-coupled device and process of fabrication thereof58US 5,189,499 ASony Corporation · 1993
- CCD focal plane processor for moving target imaging53US 4,064,533 AWestinghouse Electric Corp. · 1977
- Cascade charge coupled delay line device for compound delays38US 4,152,678 ABoard of Trustees of the Leland Stanford Jr. Unv. · 1979