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US 8,629,492 B2Granted
Shift register memory
AssigneeKabushiki Kaisha Toshiba
InventorsYoshiaki Fukuzumi, Hideaki Aochi, Tomoko Fujiwara
Life of this patent
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Abstract
In one embodiment, a shift register memory includes a substrate, and a channel layer provided on the substrate, and having a helical shape rotating around an axis which is perpendicular to a surface of the substrate. The memory further includes at least three control electrodes provided on the substrate, extending in a direction parallel to the axis, and to be used to transfer charges in the channel layer.
Claims20
A shift register memory comprising:
- a substrate;
- a channel layer provided on the substrate, and having a helical shape rotating around an axis which is perpendicular to a surface of the substrate;
- and
- at least three control electrodes provided on the substrate, extending in a direction parallel to the axis, and to be used to transfer charges in the channel layer.
1 more element
A shift register memory comprising:
- a substrate;
- a plurality of channel layers, each of which is provided on the substrate, and has a helical shape rotating around an axis which is perpendicular to a surface of the substrate;
- and
- at least three control electrodes provided on the substrate, extending in a direction parallel to the axes, and to be used to transfer charges in the channel layers,
- wherein each of the control electrodes is provided outside the helical shapes, and to be used to transfer the charges in two or more of the channel layers.
2 more elements
Dependencies are inferred from the claim text.