Charge-coupled device and process of fabrication thereof
AssigneeSony Corporation
InventorsAkio Izumi, Yasuhito Maki, Tadakuni Narabu, Maki Sato, Takaji Otsu, Katsuyuki Saito
Life of this patent
Estimating the term…
Abstract
A charge-coupled device has a multi-layer structure insulating layer is formed beneath a transfer electrode, floating electrodes and an electrode adjacent the floating electrodes so that pin hole phenomenon in a charge transfer section of the charge coupled device can be successfully prevented. On the other hand, a sole-layer structure insulating layer is formed beneath a gate electrode of a peripheral component so that a threshold voltage of the gate electrode of the peripheral component can be successfully controlled at a desired value.
Claims3
A charge-coupled device formed on a semiconductor body comprising:
- (a) a charge transfer section including a charge transferring portion and a charge detecting portion, said charge transferring portion having a plurality of transfer electrodes insulated from said semiconductor body by a first insulating layer, said charge detecting portion having a floating gate electrode and a pre-charge electrode, both of which are insulated from said semiconductor body by said first insulating layer, said charge detecting portion formed adjacent to said charge transferring portion;
- (b) said first insulating layer consisting of a first semiconductor oxide layer formed on said semiconductor body, a semiconductor nitride layer formed on said first semiconductor layer, and a second semiconductor oxide layer formed on said nitride layer;
- and
- a peripheral element at least including a MOS transistor and having a gate electrode insulated from said semiconductor body by a second insulating layer consisting of a single layer and extending beneath said gate electrode of said peripheral element.
Dependencies are inferred from the claim text.