Integrated device comprising a high mobility transistor and a mosfet transistor, and manufacturing process thereof

A process for manufacturing an integrated electronic device comprising a heterostructure field-effect transistor and a MOSFET transistor, the process comprising:

• forming a body having a heterostructure in at least one gallium nitride based layer;
• forming a first gate region overlying the at least one gallium nitride based layer;
• forming a TFT region stack on the at least one gallium nitride based layer, laterally to the first gate region, the TFT region stack including a basement insulation region overlying the at least one gallium nitride based layer, a semiconductor region overlying the basement insulation region, and a gate dielectric region overlying the semiconductor region;
• forming a second gate region overlying the gate dielectric region;
• forming an insulating layer surrounding, at least at a top and laterally, the first gate region, the second gate region, and the TFT region stack as well as covering the at least one gallium nitride based layer laterally to the first gate region and the TFT region stack;
• and
• forming a plurality of plug metal regions extending through the insulating layer and in electrical contact with the first gate region, the second gate region, the at least one gallium nitride based layer, and the semiconductor region.