Semiconductor device with supporting structures and method for forming the same

A semiconductor device, comprising:

• an insulating structure;
• a dielectric structure formed on the insulating structure;
• a metal structure formed on and surrounded by the dielectric structure;
• and
• a plurality of supporting structures formed within the metal structure, wherein each of the supporting structures is spaced apart from each other and surrounded by the metal structure,
• wherein a top surface of the insulating structure is coplanar with top surfaces of a source electrode and a drain electrode that are on opposite sides of the insulating structure, and portions of lateral surfaces of the source electrode and the drain electrode cover opposite sidewalls of the insulating structure, and a doped region covers remaining portions of the lateral surfaces of the source electrode and the drain electrode.

A semiconductor device, comprising:

• an insulating structure;
• a dielectric structure comprising a high-K dielectric material and formed on the insulating structure;
• a metal structure formed on and surrounded by the dielectric structure, wherein the metal structure is separated from the insulating structure by the dielectric structure;
• a dielectric spacer formed on the insulating structure and in contact with the insulating structure;
• and
• supporting structures formed within the metal structure, wherein side portions of the dielectric structure are formed between the dielectric spacer and the metal structure,
• wherein a top surface of the insulating structure is coplanar with top surfaces of a source electrode and a drain electrode that are on opposite sides of the insulating structure, and portions of lateral surfaces of the source electrode and the drain electrode cover opposite sidewalls of the insulating structure, and a doped region covers remaining portions of the lateral surfaces of the source electrode and the drain electrode.