H10D 84/832
Comprising igfets having stacked nanowire, nanosheet or nanoribbon channels
Official title: {comprising IGFETs having stacked nanowire, nanosheet or nanoribbon channels}
H10D84/832 (Comprising igfets having stacked nanowire, nanosheet or nanoribbon channels) appears on 1,296 US grants and 3,015 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,296
- Published applications
- 3,015
- Assignees
- 83
- Inventors
- 2,665
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 5 |
| 2014 | 1 | 3 |
| 2015 | 6 | 9 |
| 2016 | 14 | 11 |
| 2017 | 19 | 26 |
| 2018 | 18 | 18 |
| 2019 | 30 | 32 |
| 2020 | 49 | 125 |
| 2021 | 85 | 165 |
| 2022 | 145 | 297 |
| 2023 | 157 | 477 |
| 2024 | 235 | 555 |
| 2025 | 327 | 684 |
| 2026 | 210 | 607 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Wrap around backside source/drain contact6 Oct 2026US 12,757,469 B2International Business Machines Corporation
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,475 B2Taiwan Semiconductor Manfacturing Company, Ltd.
- Transistor contacts and methods of forming thereof22 Sep 2026US 12,745,461 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing the same15 Sep 2026US 12,740,131 B2Samsung Electronics Co., Ltd.
- Semiconductor device having an offset source/drain feature and method of fabricating thereof25 Aug 2026US 12,720,720 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure with conductive contact8 Oct 2026US 2026/0313986 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314027 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and methods of forming the same8 Oct 2026US 2026/0314029 A1
- Backside contact to devices with wide source/drain regions8 Oct 2026US 2026/0314042 A1Intel Corporation
Most cited
By later US patents
- Method for forming stacked nanowire transistors153US 10,032,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Threshold voltage adjustment for a gate-all-around semiconductor structure133US 10,290,546 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Integrated circuit structure incorporating stacked field effect transistors74US 10,192,819 B1Globalfoundries Inc. · 2019
- Stacked transistors with different channel widths73US 9,660,028 B1International Business Machines Corporation · 2017
- Multi-threshold voltage gate-all-around field-effect transistor devices with common gates50US 10,700,064 B1International Business Machines Corporation · 2020