H10D 84/833
Comprising forksheet igfets
Official title: {comprising forksheet IGFETs}
H10D84/833 (Comprising forksheet igfets) appears on 27 US grants and 157 published applications in this corpus.
Search patents in H10D- Granted patents
- 27
- Published applications
- 157
- Assignees
- 12
- Inventors
- 314
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2017 | 1 | 1 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 1 | 1 |
| 2022 | 1 | 8 |
| 2023 | 1 | 9 |
| 2024 | 6 | 29 |
| 2025 | 9 | 49 |
| 2026 | 8 | 60 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure and method of forming the same11 Aug 2026US 12,707,665 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure with dielectric wall structure and method for manufacturing the same19 May 2026US 12,635,195 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming semiconductor structure19 May 2026US 12,635,233 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor backside isolation feature for merged epitaxy19 May 2026US 12,635,487 B2International Business Machines Corporation
- Semiconductor device and manufacturing method thereof10 Mar 2026US 12,575,144 B2United Microelectronics Corp.
- Backside contact to devices with wide source/drain regions8 Oct 2026US 2026/0314042 A1Intel Corporation
- Merged-height cell semiconductor device structure and methods of forming same1 Oct 2026US 2026/0300603 A1Samsung Electronics Co., Ltd.
- Integrated circuit structures having hybrid spine-fet architecture1 Oct 2026US 2026/0304934 A1Intel Corporation
- Integrated circuit device24 Sep 2026US 2026/0293300 A1Samsung Electronics Co., Ltd.
- Backside ns depopulation for forksheet transistors17 Sep 2026US 2026/0282486 A1International Business Machines Corporation
Most cited
By later US patents
- Gap-insulated semiconductor device3US 11,527,534 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2022
- Integrated circuit including asymmetric power line and method of designing the same2US 11,755,809 B2Samsung Electronics Co., Ltd. · 2023
- Long channel nanosheet FET having tri-layer spacers1US 11,049,979 B2International Business Machines Corporation · 2021
- Semiconductor structure and method of forming semiconductor structure1US 11,881,480 B2Semiconductor Manufacturing International (Beijing) Corporation · 2024
- Gap-insulated semiconductor device1US 11,996,410 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2024