Semiconductor device having an offset source/drain feature and method of fabricating thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Chuan Yang, Chia-Hao Pao, Wen-Chun Keng, Lien Jung Hung, Ping-Wei Wang
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Abstract
A semiconductor device and method of fabricating thereof where the device includes a fin structure between a first isolation region and a second isolation region. A first source/drain feature is formed over a recessed portion of the first fin structure. The first source/drain feature interfaces a top surface of the first isolation region for a first distance and interfaces the top surface of the second isolation region for a second distance. The first distance is different than the second distance. The source/drain feature is offset in a direction.
Claims20
A method, comprising:
- providing a first fin structure disposed over a substrate;
- forming a cladding layer of a first thickness on sidewalls of the first fin structure;
- forming a masking element over the substrate including over a first portion of the cladding layer on the first fin structure and providing an opening in the masking element over a second portion of the cladding layer on the first fin structure;
- through the opening, etching the second portion of the cladding layer to reduce a thickness of the cladding layer on the first fin structure to a second thickness;
- forming an isolation structure abutting the cladding layer having the second thickness;
- after forming the isolation structure, removing the cladding layer and recessing the first fin structure;
- and
- growing a first source/drain feature over the recessed first fin structure.
A method, comprising:
- providing a first fin structure and a second fin structure each disposed over a substrate;
- forming a cladding layer of a first thickness on sidewalls of the first fin structure and the second fin structure;
- forming a masking element over the first fin structure and the second fin structure;
- providing an opening in the masking element exposing a portion of the cladding layer on a sidewall of the first fin structure;
- etching the cladding layer exposed by the opening to reduce a thickness of the cladding layer on the sidewall of the first fin structure to a second thickness, wherein the masking element remains over the cladding layer on the second fin structure during the etching;
- after the etching, forming an isolation structure having a first portion abutting the cladding layer adjacent the first fin structure and a second portion abutting the cladding layer adjacent the second fin structure;
- after forming the isolation structure, removing the cladding layer and recessing the first fin structure and the second fin structure;
- and
- growing a first source/drain feature over the recessed first fin structure and growing a second source/drain feature over the recessed second fin structure.
A method, comprising:
- providing a first semiconductor structure;
- forming a cladding layer of a first thickness on sidewalls of the first semiconductor structure;
- forming a masking element over a first portion of the cladding layer on the first semiconductor structure and providing an opening in the masking element over a second portion of the cladding layer on the first semiconductor structure;
- through the opening, etching the second portion of the cladding layer to reduce a thickness of the cladding layer on the first semiconductor structure to a second thickness;
- forming an isolation structure abutting the cladding layer having the second thickness;
- after forming the isolation structure, removing the cladding layer and recessing the first semiconductor structure;
- and
- growing a first source/drain feature over the recessed first semiconductor structure.
Dependencies are inferred from the claim text.