H10D 84/83135
The igfets characterised by having different gate conductor materials or different gate
Official title: {the IGFETs characterised by having different gate conductor materials or different gate conductor implants}
H10D84/83135 (The igfets characterised by having different gate conductor materials or different gate) appears on 1,373 US grants and 1,739 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,373
- Published applications
- 1,739
- Assignees
- 134
- Inventors
- 1,930
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 4 | 2 |
| 2002 | 7 | 3 |
| 2003 | 1 | 4 |
| 2004 | 6 | 6 |
| 2005 | 5 | 6 |
| 2006 | 2 | 4 |
| 2007 | 0 | 12 |
| 2008 | 4 | 15 |
| 2009 | 5 | 19 |
| 2010 | 16 | 21 |
| 2011 | 19 | 15 |
| 2012 | 14 | 11 |
| 2013 | 16 | 27 |
| 2014 | 30 | 53 |
| 2015 | 49 | 71 |
| 2016 | 72 | 82 |
| 2017 | 87 | 94 |
| 2018 | 84 | 100 |
| 2019 | 123 | 122 |
| 2020 | 131 | 156 |
| 2021 | 105 | 147 |
| 2022 | 136 | 178 |
| 2023 | 104 | 179 |
| 2024 | 145 | 175 |
| 2025 | 138 | 147 |
| 2026 | 51 | 90 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with supporting structures and method for forming the same25 Aug 2026US 12,720,846 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Trench isolation with conductive structures18 Aug 2026US 12,713,689 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Heterogeneous metal line compositions for advanced integrated circuit structure fabrication11 Aug 2026US 12,707,697 B2Intel Corporation
- Semiconductor structure and method for fabricating the same11 Aug 2026US 12,707,703 B2United Microelectronics Corp.
- Integrated circuit device having active region coupled to conductive patterns on opposite sides of substrate11 Aug 2026US 12,707,999 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor threshold voltage tuning through fluorine doping of gate stack1 Oct 2026US 2026/0304926 A1Intel Corporation
- Semiconductor device24 Sep 2026US 2026/0293298 A1Samsung Electronics Co., Ltd.
- Gate structures17 Sep 2026US 2026/0282528 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and manufacturing method thereof10 Sep 2026US 2026/0271380 A1Nanya Technology Corporation
- Integrated circuit device10 Sep 2026US 2026/0271392 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor devices with varying threshold voltage and fabrication methods thereof487US 9,748,145 B1Globalfoundries Inc. · 2017
- Semiconductor device and method for fabricating the same434US 9,337,057 B2Samsung Electronics Co., Ltd. · 2016
- Integrated circuit having multiple threshold voltages428US 9,362,180 B2Globalfoundries Inc. · 2016
- Integrated circuits with varying gate structures and fabrication methods425US 9,576,952 B2Globalfoundries Inc. · 2017