Integrated circuit device having active region coupled to conductive patterns on opposite sides of substrate

An integrated circuit (IC) device, comprising:

• a plurality of active regions;
• a plurality of gate regions over the plurality of active regions, the plurality of gate regions and the plurality of active regions together configured as a plurality of transistors;
• a first metal layer over the plurality of active regions;
• a second metal layer under the plurality of active regions;
• and
• first and second resistor structures correspondingly comprising first and second active regions among the plurality of active regions,
• wherein one of the first metal layer and the second metal layer comprises a conductive pattern electrically coupling the first and second resistor structures.

An integrated circuit (IC) device, comprising:

• a substrate having, in a thickness direction of the substrate, opposite first and second sides;
• and
• a plurality of resistor cells over the first side of the substrate, each of the plurality of resistor cells comprising:
• a pair of transistors, and
• a resistor structure comprising a common source/drain of the pair of transistors,
• wherein the resistor structures of the plurality of resistor cells are electrically coupled to each other in series or in parallel by one or more conductive patterns on the second side of the substrate.