Integrated circuit device

An integrated circuit device comprising:

• a first fin-type active region extending in a first horizontal direction in a first transistor region;
• a second fin-type active region extending in the first horizontal direction in a second transistor region;
• a first nanosheet stack spaced apart in a vertical direction from a first fin top surface of the first fin-type active region, the first nanosheet stack comprising a plurality of first region nanosheets vertically overlapping the first fin top surface of the first fin-type active region;
• a second nanosheet stack spaced apart in the vertical direction from a second fin top surface of the second fin-type active region, the second nanosheet stack comprising a plurality of second region nanosheets vertically overlapping the second fin top surface of the second fin-type active region;
• and
• a gate line surrounding the plurality of first region nanosheets and the plurality of second region nanosheets, the gate line extending in a second horizontal direction, wherein the second horizontal direction intersects the first horizontal direction,
• wherein the gate line comprises:
• a blanket work-function metal-containing layer of a first conductivity type surrounding the plurality of first region nanosheets;
• and
• a work-function metal-containing structure of a second conductivity type surrounding the plurality of second region nanosheets,
• wherein a first thickness in the vertical direction of a portion of the work-function metal-containing structure, which covers a top surface of the second nanosheet stack, is greater than a second thickness in the second horizontal direction of a portion of the work-function metal-containing structure, which covers a sidewall of the second nanosheet stack.

An integrated circuit device comprising:

• a first fin-type active region extending in a first horizontal direction in an NMOS transistor region;
• a second fin-type active region extending in the first horizontal direction in a PMOS transistor region;
• a device isolation film covering both sidewalls of the first fin-type active region and the second fin-type active region in a second horizontal direction, wherein the second horizontal direction intersects the first horizontal direction;
• a first nanosheet stack spaced apart in a vertical direction from a first fin top surface of the first fin-type active region, the first nanosheet stack comprising a plurality of first region nanosheets vertically overlapping the first fin top surface of the first fin-type active region;
• a second nanosheet stack spaced apart in the vertical direction from a second fin top surface of the second fin-type active region, the second nanosheet stack comprising a plurality of second region nanosheets vertically overlapping the second fin top surface of the second fin-type active region;
• and
• a gate line extending in the second horizontal direction on the first fin-type active region, the second fin-type active region, and the device isolation film,
• wherein the gate line comprises:
• a P-type work-function metal-containing structure surrounding the plurality of second region nanosheets;
• and
• an N-type blanket work-function metal-containing layer comprising a portion surrounding the plurality of first region nanosheets and a portion surrounding the plurality of second region nanosheets and the P-type work-function metal-containing structure,
• wherein a first thickness in the vertical direction of a portion of the P-type work-function metal-containing structure, which covers a top surface of the second nanosheet stack, is greater than a second thickness in the second horizontal direction of a portion of the P-type work-function metal-containing structure, which covers a sidewall of the second nanosheet stack, and
• each of both sidewalls of the P-type work-function metal-containing structure in the second horizontal direction comprises concave surfaces and convex surfaces.