Semiconductor device and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMoon-Kyu Park, Oh-Seong Kwon, Sung-Kee Han, Sang-Jin Hyun
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Abstract
Provided are methods for fabricating semiconductor devices. The methods for fabricating the semiconductor devices may include forming a first interlayer insulation film including a trench on a substrate, forming a high-k layer along an inner sidewall and a bottom surface of the trench, forming a first work function control film including impurities along the high-k layer, removing the impurities from the first work function control film to reduce surface resistance of the first work function control film by about 30% to about 60% and forming a gate metal in the trench.
Claims20
A method for fabricating a semiconductor device, the method comprising:
- forming a first interlayer insulation film including a trench on a substrate;
- forming a high-k layer along an inner sidewall and a bottom surface of the trench;
- forming a first work function control film along the high-k layer, the first work function control film including impurities;
- at least partially removing the impurities from the first work function control film to reduce surface resistance of the first work function control film by about 30% to about 60%;
- and
- forming a gate metal in the trench.
A method for forming a semiconductor device, the method comprising:
- forming a gate insulating layer on a substrate;
- forming a work function control film comprising impurities on the gate insulating layer;
- and
- doping hydrogen into the work function control film using a hydrogen plasma doping process to remove at least a portion of the impurities from the work function control film.
Dependencies are inferred from the claim text.