Semiconductor structure and manufacturing method thereof

Abstract

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes N-type and P-type transistors separated from each other. The N-type transistor includes a first gate dielectric layer disposed on the substrate, a metal-doped region, a first gate layer and first doped regions. The metal-doped region is disposed in the first gate dielectric layer. The first gate layer is disposed on the first gate dielectric layer. The first doped regions are disposed in the substrate on two sides of the first gate layer. The P-type transistor includes a channel layer disposed on the substrate, a second gate dielectric layer, a second gate layer and second doped regions. The second gate dielectric layer is disposed on the channel layer. The second gate layer is disposed on the second gate dielectric layer. The second doped regions are disposed in the substrate on two sides of the channel layer.

Dependencies are inferred from the claim text.