H10D 84/835
Comprising ldmos
Official title: {comprising LDMOS}
H10D84/835 (Comprising ldmos) appears on 366 US grants and 385 published applications in this corpus.
Search patents in H10D- Granted patents
- 366
- Published applications
- 385
- Assignees
- 154
- Inventors
- 722
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 7 | 0 |
| 1999 | 4 | 0 |
| 2000 | 5 | 0 |
| 2001 | 5 | 1 |
| 2002 | 3 | 1 |
| 2003 | 0 | 3 |
| 2004 | 4 | 5 |
| 2005 | 6 | 13 |
| 2006 | 4 | 11 |
| 2007 | 5 | 4 |
| 2008 | 12 | 17 |
| 2009 | 7 | 14 |
| 2010 | 12 | 12 |
| 2011 | 14 | 12 |
| 2012 | 10 | 6 |
| 2013 | 12 | 15 |
| 2014 | 4 | 8 |
| 2015 | 21 | 21 |
| 2016 | 20 | 32 |
| 2017 | 29 | 29 |
| 2018 | 26 | 27 |
| 2019 | 26 | 20 |
| 2020 | 22 | 21 |
| 2021 | 23 | 15 |
| 2022 | 10 | 19 |
| 2023 | 22 | 19 |
| 2024 | 10 | 18 |
| 2025 | 13 | 20 |
| 2026 | 5 | 22 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- LDMOS transistor device and method for forming the same4 Aug 2026US 12,701,732 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with multi-layer contact liner structure5 May 2026US 12,622,017 B2Samsung Electronics Co., Ltd.
- High-voltage tolerant device and detection circuit7 Apr 2026US 12,598,802 B2Leadtrend Technology Corp.
- Laterally diffused metal oxide semiconductor device and preparation method thereof17 Mar 2026US 12,581,698 B2Cansemi Technology Inc.
- Rugged LDMOS with reduced NSD in source10 Feb 2026US 12,550,366 B2Texas Instruments Incorporated
- Laterally-diffused metal-oxide-semiconductor devices with a field plate and a recessed drain1 Oct 2026US 2026/0304887 A1Globalfoundries Singapore Pte. Ltd.
- Semiconductor devices with field relief layers and integrated methods of fabrication thereof13 Aug 2026US 2026/0239719 A1
- Semiconductor structure and manufacturing method thereof13 Aug 2026US 2026/0239729 A1Powerchip Semiconductor Manufacturing Corporation
- Semiconductor device with front via16 Jul 2026US 2026/0206278 A1International Business Machines Corporation
- Semiconductor device16 Jul 2026US 2026/0206305 A1Vanguard International Semiconductor Corporation
Most cited
By later US patents
- Semiconductor device having four power MOSFETs constituting H bridge circuit180US 5,703,390 ANEC Corporation · 1997
- Fabrication of multiple field-effect transistor structure having local threshold-adjust doping151US 6,020,227 ANational Semiconductor Corporation · 2000
- Lightly-doped drain MOSFET with improved breakdown characteristics142US 5,386,136 ASiliconix Incorporated · 1995
- Method of making lightly-doped drain DMOS with improved breakdown characteristics86US 5,514,608 ASiliconix Incorporated · 1996
- Insulated gate type semiconductor device and method of manufacturing thereof85US 6,323,518 B1Hitachi, Ltd. · 2001