Laterally-diffused metal-oxide-semiconductor devices with a field plate and a recessed drain
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsYong Wah See, Guowei Zhang, Ee Jan Khor
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Abstract
Structures for a laterally-diffused metal-oxide-semiconductor device and methods of forming same. The structure comprises a semiconductor substrate including a trench, a source in the semiconductor substrate, and a drain in the semiconductor substrate. The trench has a sidewall, and the drain is positioned inside the trench. A gate is laterally positioned between the drain and the source, and a field plate is adjacent to the first sidewall of the trench. The field plate is laterally positioned between the gate and the drain.
Claims20
A structure for a laterally-diffused metal-oxide-semiconductor device, the structure comprising:
- a semiconductor substrate including a trench, the trench having a first sidewall;
- a first source in the semiconductor substrate;
- a drain in the semiconductor substrate, the drain positioned inside the trench;
- a first gate laterally positioned between the drain and the first source;
- and
- a first field plate adjacent to the first sidewall of the trench, the first field plate laterally positioned between the first gate and the drain.
A method of forming a structure for a laterally-diffused metal-oxide-semiconductor device, the method comprising:
- forming a trench in a semiconductor substrate, wherein the trench has a sidewall;
- forming a source in the semiconductor substrate;
- forming a drain in the semiconductor substrate, wherein the drain is positioned inside the trench;
- forming a gate laterally positioned between the drain and the source;
- and
- forming a field plate adjacent to the sidewall of the trench, wherein the field plate is laterally positioned between the gate and the drain.
Dependencies are inferred from the claim text.