Laterally diffused metal oxide semiconductor device and preparation method thereof

A laterally diffused metal oxide semiconductor device, comprising:

• a substrate;
• a first drift region of a first conductivity type and a body region of a second conductivity type, located in the substrate, respectively;
• a first gate structure located above a portion of the body region and a portion of the first drift region, wherein the body region comprises a first region not covered by the first gate structure, the first drift region comprises a second region not covered by the first gate structure, and the whole second region of the first drift region is below the first blocking structure,
• a body region contact region of the second conductivity type located in the first region of the body region;
• and
• a first doped region of the second conductivity type located in the second region of the first drift region, and a doping concentration of the first doped region is lower than a doping concentration of the first drift region,
• wherein the body region contact region and the first doped region are formed in a one-step ion implantation process, during the ion implantation process, a part of ions are implanted into the first region of the body region to form the body region contact region of the second conductivity type, a part of ions are implanted into the whole second region after passing through the first blocking structure to form the first doped region, the first field plate is configured as a blocking structure during the one-step ion implantation process to form the first doped region;
• wherein the first blocking structure comprises a first field plate structure, the first doped region locates in the second region below the first field plate structure, and a vertical projection center of the first doped region in a thickness direction of the substrate coincides with a vertical projection center of the first field plate structure in the thickness direction of the substrate;
• or
• wherein the laterally diffused metal oxide semiconductor device comprises the first field plate structure located above the first drift region, the first blocking structure comprises a spacer structure located between the first field plate structure and the first gate structure and extending from a sidewall of the first field plate structure to a sidewall of the first gate structure, the first doped region is located in the second region below the spacer structure, and the vertical projection center of the first doped region in the thickness direction of the substrate coincides with the vertical projection center of the spacer structure in the thickness direction of the substrate.