Semiconductor structure and manufacturing method thereof

Abstract

A semiconductor structure includes a substrate, a transistor device, a first back gate, a second back gate, and a dielectric layer. The substrate has a front side and a back side opposite to each other. The transistor device is located on the front side. The transistor device includes a first drift region and a second drift region. The first drift region and the second drift region are located in the substrate. The first back gate is located on the back side. The first back gate extends into the first drift region. The second back gate is located on the back side. The second back gate extends into the second drift region. The dielectric layer is located between the first back gate and the substrate, and between the second back gate and the substrate.

Dependencies are inferred from the claim text.