Semiconductor device with multi-layer contact liner structure

A semiconductor device comprising:

• an active pattern extended in a first direction;
• a plurality of gate structures comprising a gate electrode and a gate spacer, which are disposed to be spaced apart from each other in the first direction on the active pattern and extended in a second direction, and a gate capping layer on the gate electrode and the gate spacer;
• a source/drain pattern on the active pattern;
• an etch stop layer extended along a sidewall of the plurality of gate structures and an upper surface of the source/drain pattern;
• a source/drain contact on the source/drain pattern;
• and
• a contact liner structure extended along a sidewall of the source/drain contact on the etch stop layer,
• wherein the contact liner structure comprises a first contact liner, and a second contact liner extended along the first contact liner and disposed between the first contact liner and the source/drain contact,
• wherein the etch stop layer is in contact with a sidewall of the first contact liner at a first height in a third direction perpendicular to the first direction and the second direction,
• wherein an interlayer insulating layer is disposed between the etch stop layer and the sidewall of the first contact liner at a second height lower than the first height, and
• wherein the sidewall of the source/drain contact extends downwardly beyond a bottom portion of the first contact liner and a lower end portion of the second contact liner.

A semiconductor device comprising:

• an active pattern comprising a lower pattern extended in a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction perpendicular to the first direction;
• a plurality of gate structures comprising a gate electrode and a gate spacer, which are disposed to be spaced apart from each other in the first direction on the active pattern and extended in a third direction crossing the first direction and the second direction;
• a source/drain pattern on the active pattern;
• a source/drain contact on the source/drain pattern;
• an etch stop layer extended along a sidewall of the plurality of gate structures and an upper surface of the source/drain pattern;
• and
• a contact liner structure extended along a sidewall of the source/drain contact on the etch stop layer,
• wherein the contact liner structure comprises a first contact liner and a second contact liner on the first contact liner,
• wherein the first contact liner comprises a first bottom portion, and a first vertical portion protruded from the first bottom portion and extended in the second direction,
• wherein the etch stop layer is in contact with the first vertical portion at a first height in the second direction,
• wherein an interlayer insulating layer is disposed between the etch stop layer and the first vertical portion at a second height lower than the first height, and
• wherein the sidewall of the source/drain contact extends downwardly beyond the first bottom portion of the first contact liner and a lower end portion of the second contact liner.