US 2026/0206305 A1Published application

Semiconductor device

AssigneeVanguard International Semiconductor Corporation

InventorsChen-Dong Tzou, Yun-Kai Lai, Chih-Cherng Liao, Chia-Hao Lee

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Abstract

A semiconductor device includes vertical and lateral transistors respectively disposed in first and second areas of a substrate having a first conductivity type. The vertical transistor includes a first buried layer and a first well region both having a second conductivity type, a first trench, and a second trench. The first buried layer is embedded in the substrate. The first well region is disposed directly above the first buried layer. The first trench extends downward from the first well region into the first buried layer. A conductive portion is disposed in the first trench, in direct contact with the first buried layer, and electrically connected to a drain contact. The second trench is disposed in the first well region. A gate electrode is disposed in the second trench. A source region abuts the second trench.

Claims20

Dependent claims

A semiconductor device, comprising:

a substrate, having a first conductivity type and comprising a first area and a second area;
a vertical transistor, disposed in the first area of the substrate, and comprising:
a first buried layer, having a second conductivity type, and embedded in the substrate;
a first well region, having the second conductivity type, and disposed directly above the first buried layer;
a first trench, extending downward from the first well region into the first buried layer, wherein a bottom surface of the first trench is located in the first buried layer;
a conductive portion, disposed in the first trench, in direct contact with the first buried layer, and electrically coupled to a drain contact;
a second trench, disposed in the first well region;
a gate electrode, disposed in the second trench;
and
a source region, abutting a side of the second trench;
and
a lateral transistor, disposed in the second area of the substrate.

9 more elements

Dependencies are inferred from the claim text.