H10D 84/8311
The igfets characterised by having different channel structures
Official title: {the IGFETs characterised by having different channel structures}
H10D84/8311 (The igfets characterised by having different channel structures) appears on 3,091 US grants and 3,884 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,091
- Published applications
- 3,884
- Assignees
- 317
- Inventors
- 4,087
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 6 | 0 |
| 1986 | 7 | 0 |
| 1987 | 1 | 0 |
| 1988 | 5 | 0 |
| 1989 | 6 | 0 |
| 1990 | 7 | 0 |
| 1991 | 3 | 0 |
| 1992 | 4 | 0 |
| 1993 | 5 | 0 |
| 1994 | 5 | 0 |
| 1995 | 6 | 0 |
| 1996 | 8 | 0 |
| 1997 | 12 | 0 |
| 1998 | 22 | 0 |
| 1999 | 18 | 0 |
| 2000 | 19 | 0 |
| 2001 | 6 | 4 |
| 2002 | 12 | 26 |
| 2003 | 12 | 16 |
| 2004 | 25 | 27 |
| 2005 | 19 | 31 |
| 2006 | 13 | 34 |
| 2007 | 20 | 33 |
| 2008 | 20 | 60 |
| 2009 | 19 | 43 |
| 2010 | 37 | 35 |
| 2011 | 45 | 50 |
| 2012 | 39 | 43 |
| 2013 | 59 | 83 |
| 2014 | 80 | 120 |
| 2015 | 115 | 168 |
| 2016 | 186 | 189 |
| 2017 | 218 | 259 |
| 2018 | 235 | 219 |
| 2019 | 214 | 233 |
| 2020 | 238 | 326 |
| 2021 | 236 | 284 |
| 2022 | 217 | 295 |
| 2023 | 204 | 377 |
| 2024 | 252 | 393 |
| 2025 | 290 | 318 |
| 2026 | 129 | 218 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- 3D-stacked semiconductor device having different channel and gate dimensions across lower stack and upper stack6 Oct 2026US 12,757,455 B2Samsung Electronics Co., Ltd.
- Method for forming a semiconductor device by recessing semiconductor layers and inner spacers29 Sep 2026US 12,751,079 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having a two-dimensional channel and method for fabricating the same25 Aug 2026US 12,720,800 B2Samsung Electronics Co., Ltd.
- Semiconductor device25 Aug 2026US 12,720,802 B2Samsung Electronics Co., Ltd.
- Bonding and isolation techniques for stacked transistor structures25 Aug 2026US 12,720,818 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Three-dimensional memory device containing peripheral circuit with fin field effect transistors and method of making the same8 Oct 2026US 2026/0313892 A1SanDisk Technologies LLC
- Stacked fet with dielectric spacer between gate metal and source/drain contact8 Oct 2026US 2026/0314047 A1International Business Machines Corporation
- Merged-height cell semiconductor device structure and methods of forming same1 Oct 2026US 2026/0300603 A1Samsung Electronics Co., Ltd.
- Conversion of metal/metal oxide materials to semiconducting transition metal dichalcogenide materials in gate-all-around (gaa) transistor devices1 Oct 2026US 2026/0304818 A1Intel Corporation
- Semiconductor device and method for forming the same1 Oct 2026US 2026/0304922 A1Vanguard International Semiconductor Corporation
Most cited
By later US patents
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- High density nanosheet diodes304US 9,842,835 B1International Business Machines Corporation · 2017
- Semiconductor device employing crystallization catalyst262US 5,569,936 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Field effect devices having short period superlattice structures using Si and Ge261US 5,357,119 AThe Board of Regents of the University of California · 1994
- Hybrid fin field-effect transistor structures and related methods245US 8,183,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2012