Semiconductor device

A semiconductor device, comprising:

• a substrate having a first surface having a first cell region and a second cell region arranged in a first direction, and a second surface opposite to the first surface;
• a first fin-type active pattern extending lengthwise in the first direction in the first cell region of the substrate and having a first width in a second direction intersecting the first direction;
• a second fin-type active pattern overlapping the first fin-type active pattern in the first direction in the second cell region of the substrate, extending lengthwise in the first direction, and having a second width in the second direction, the second width being smaller than the first width;
• a device isolation pattern disposed between the first and second fin-type active patterns along a boundary between the first and second cell regions;
• first and second gate structures disposed in the first and second cell regions, respectively, and extending lengthwise in the second direction to cross the first and second fin-type active patterns, respectively;
• a first source/drain region disposed on the first fin-type active pattern on at least one side of the first gate structure;
• a second source/drain region disposed on the second fin-type active pattern on at least one side of the second gate structure;
• first and second contact structures connected to the first and second source/drain regions, respectively, and extending in a direction perpendicular to the first surface of the substrate;
• a gate isolation structure positioned at a boundary of the first cell region adjacent to the first fin-type active pattern in the second direction, and extending in the first direction while contacting one end surface of the first gate structure;
• a buried conductive structure positioned at a boundary of the second cell region adjacent to the second fin-type active pattern in the second direction, extending in the first direction while contacting one end surface of the gate isolation structure, and connected to the second contact structure;
• a conductive through-structure extending from the second surface of the substrate toward the first surface of the substrate, and connected to the buried conductive structure;
• a first wiring structure having a first wiring layer connecting the first contact structure and the buried conductive structure;
• and
• a second wiring structure disposed on the second surface of the substrate, and having a second wiring layer connected to the conductive through-structure,
• wherein the buried conductive structure has a width in the second direction that is greater than a width of the gate isolation structure in the second direction.