US 2026/0304922 A1 · SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Abstract

A semiconductor device and a method for forming the same are provided. The semiconductor device includes a silicon carbide substrate, first and second epitaxial layers, a gate structure and a contact feature. The silicon carbide substrate of a first conductivity type has a first active region. The first epitaxial layer of a second conductivity type is disposed on the silicon carbide substrate. The second epitaxial layer of the first conductivity type is disposed on the first epitaxial layer. The gate structure is disposed in the silicon carbide substrate in the first active region and passes through the first epitaxial layer. The contact feature extends from the top surface of the second epitaxial layer in the first active region, through the first epitaxial layer and into the silicon carbide substrate. The first contact feature is electrically connected to the silicon carbide substrate and the first epitaxial layer.

Claims20

Dependent claims

A semiconductor device, comprising:

a silicon carbide substrate having a first active region and a first conductivity type;
a first epitaxial layer disposed on a top surface of the silicon carbide substrate, wherein the first epitaxial layer has a second conductivity type;
a second epitaxial layer disposed on a top surface of the first epitaxial layer, wherein the second epitaxial layer has the first conductivity type;
a first gate structure disposed in the first active region of the silicon carbide substrate, wherein the first gate structure extends from the silicon carbide substrate through the first epitaxial layer in a first direction;
and
a first contact feature extending from a top surface of the second epitaxial layer of the first active region, through the first epitaxial layer and to the silicon carbide substrate in the first direction, wherein the first contact feature and the first gate structure are separated from each other in a second direction, and the first contact feature is electrically connected to the silicon carbide substrate and the first epitaxial layer.

3 more elements

A method for forming a semiconductor device, comprising:

providing a silicon carbide substrate, wherein the silicon carbide substrate has a first active region and a first conductivity type;
growing a first epitaxial layer on a top surface of the silicon carbide substrate, wherein the first epitaxial layer has a second conductivity type;
growing a second epitaxial layer on a top surface of the first epitaxial layer, wherein the second epitaxial layer has the first conductivity type;
forming a first trench in the second epitaxial layer, the first epitaxial layer and a portion of the silicon carbide substrate in the first active region in a first direction;
forming a first gate electrode in the first trench;
forming a second trench in the second epitaxial layer and a portion of the first epitaxial layer in the first active region in the first direction, wherein the first trench and the second trench are spaced apart from each other in a second direction;
and
forming a first contact feature in the second trench, wherein the first contact feature extends through the first epitaxial layer and into the silicon carbide substrate in the first direction.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method for forming the same

Life of this patent

Semiconductor device and method for forming the same

Life of this patent

Abstract

Claims20