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US 8,183,627 B2Granted
Hybrid fin field-effect transistor structures and related methods
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMatthew T. Currie
Life of this patent
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Abstract
Semiconductor-on-insulator structures facilitate the fabrication of devices, including MOSFETs that are at least partially depleted during operation and FinFETs including bilayer fins and/or crystalline oxide.
Claims15
A structure comprising:
- a substrate having an insulator layer disposed thereon;
- and
- a fin field-effect transistor disposed over the substrate, the fin field-effect transistor including:
- a source region and a drain region disposed in contact with the insulator layer;
- at least one fin extending between the source and the drain regions and comprising a bilayer;
- a gate disposed above the bilayer, extending over the at least one fin and between the source and the drain regions;
- and
- a gate dielectric layer disposed between the gate and the fin,
- wherein the bilayer comprises a second semiconductor material disposed over a first semiconductor material, and the first semiconductor material is different from the second semiconductor material, and a sidewall surface of the at least one fin includes the first semiconductor material.
6 more elements
A structure comprising:
- a substrate;
- a first crystalline insulator layer disposed over at least a first portion of the substrate;
- a second crystalline insulator layer disposed over at least a second portion of the substrate;
- a first fin field-effect transistor disposed over the substrate, the first fin field-effect-transistor including:
- a first source region and a first drain region disposed over and in contact with the first crystalline insulator layer;
- a first fin extending between the first source and the first drain regions, the first fin comprising a first semiconductor material disposed on at least one vertically oriented sidewall of the first fin;
- a first gate, disposed above the substrate, extending over the first fin and between the first source and the first drain regions;
- a first gate dielectric layer disposed between the first gate and the first fin;
- and
- a second fin field-effect transistor disposed over the substrate, the second fin field-effect-transistor including:
- a second source region and a second drain region disposed over and in contact with the second crystalline insulator layer;
- a second fin extending between the second source and the second drain regions and comprising a second semiconductor material disposed on at least one vertically oriented sidewall of the second fin;
- a second gate, disposed above the substrate, extending over the second fin and between the second source and the second drain regions;
- and
- a second gate dielectric layer disposed between the second gate and the second fin,
- wherein the first semiconductor material has a first crystalline orientation, the second semiconductor material has a second crystalline orientation, and the first and second crystalline orientations are different.
13 more elements
A structure comprising:
- a substrate;
- a crystalline insulator material disposed over the substrate;
- a first fin field-effect transistor disposed over the substrate;
- and
- a second fin field-effect transistor disposed over the substrate, at least one of the first fin field-effect transistor or the second field-effect transistor being disposed over the crystalline insulator material;
- wherein the first fin field-effect transistor comprises a first semiconductor material has a first crystalline orientation, the second fin field-effect transistor comprises a second semiconductor material has a second crystalline orientation, and the first and second crystalline orientations are different.
3 more elements
Dependencies are inferred from the claim text.