H10D 84/834
Comprising finfets
Official title: {comprising FinFETs}
H10D84/834 (Comprising finfets) appears on 5,983 US grants and 6,954 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,983
- Published applications
- 6,954
- Assignees
- 259
- Inventors
- 4,892
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 0 | 1 |
| 2005 | 1 | 3 |
| 2006 | 1 | 7 |
| 2007 | 5 | 10 |
| 2008 | 3 | 10 |
| 2009 | 6 | 15 |
| 2010 | 5 | 9 |
| 2011 | 16 | 22 |
| 2012 | 10 | 25 |
| 2013 | 30 | 89 |
| 2014 | 118 | 204 |
| 2015 | 198 | 378 |
| 2016 | 415 | 485 |
| 2017 | 536 | 594 |
| 2018 | 592 | 585 |
| 2019 | 639 | 644 |
| 2020 | 662 | 808 |
| 2021 | 551 | 603 |
| 2022 | 497 | 623 |
| 2023 | 484 | 594 |
| 2024 | 522 | 593 |
| 2025 | 464 | 452 |
| 2026 | 228 | 200 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device comprising connections through stacked transistors for routing flexibility29 Sep 2026US 12,751,045 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Etch profile control of gate contact opening29 Sep 2026US 12,751,062 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having a bump between fin-shaped structures15 Sep 2026US 12,740,108 B2United Microelectronics Corp.
- Ultra-scaled transistor devices to enable cell size scaling15 Sep 2026US 12,740,115 B2Intel Corporation
- Semiconductor device and method of manufacturing the same15 Sep 2026US 12,740,131 B2Samsung Electronics Co., Ltd.
- Three-dimensional memory device containing peripheral circuit with fin field effect transistors and method of making the same8 Oct 2026US 2026/0313892 A1SanDisk Technologies LLC
- Decoupling finfet capacitors8 Oct 2026US 2026/0313922 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with backside interconnection and method for forming the same8 Oct 2026US 2026/0313967 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor devices and methods of manufacture thereof1,575US 8,785,285 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- System and methods for converting planar design to FinFET design1,326US 8,816,444 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016