H10D 84/83125
The igfets characterised by having shared source or drain regions
Official title: {the IGFETs characterised by having shared source or drain regions}
H10D84/83125 (The igfets characterised by having shared source or drain regions) appears on 663 US grants and 743 published applications in this corpus.
Search patents in H10D- Granted patents
- 663
- Published applications
- 743
- Assignees
- 198
- Inventors
- 1,422
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 4 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 4 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 8 | 0 |
| 1999 | 7 | 0 |
| 2000 | 6 | 0 |
| 2001 | 10 | 4 |
| 2002 | 6 | 10 |
| 2003 | 5 | 2 |
| 2004 | 8 | 9 |
| 2005 | 5 | 5 |
| 2006 | 6 | 9 |
| 2007 | 3 | 8 |
| 2008 | 2 | 19 |
| 2009 | 4 | 17 |
| 2010 | 17 | 15 |
| 2011 | 14 | 22 |
| 2012 | 17 | 24 |
| 2013 | 24 | 26 |
| 2014 | 24 | 34 |
| 2015 | 40 | 45 |
| 2016 | 41 | 41 |
| 2017 | 44 | 46 |
| 2018 | 45 | 38 |
| 2019 | 40 | 31 |
| 2020 | 45 | 54 |
| 2021 | 37 | 43 |
| 2022 | 32 | 44 |
| 2023 | 36 | 53 |
| 2024 | 39 | 55 |
| 2025 | 31 | 44 |
| 2026 | 17 | 45 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Placeholder with dielectric liner protection to prevent direct backside contact (DBC) from shorting to gate25 Aug 2026US 12,720,853 B2International Business Machines Corporation
- Semiconductor devices having contact plugs11 Aug 2026US 12,707,670 B2Samsung Electronics Co., Ltd.
- Integrated circuit device having active region coupled to conductive patterns on opposite sides of substrate11 Aug 2026US 12,707,999 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device4 Aug 2026US 12,700,858 B2Rohm Co., Ltd.
- Semiconductor device and manufacturing method thereof26 May 2026US 12,641,811 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices8 Oct 2026US 2026/0314043 A1Samsung Electronics Co., Ltd.
- Semiconductor device and methods of forming the same8 Oct 2026US 2026/0314045 A1
- Laterally-diffused metal-oxide-semiconductor devices with a field plate and a recessed drain1 Oct 2026US 2026/0304887 A1Globalfoundries Singapore Pte. Ltd.
- Semiconductor devices with gate cut structures integrated with fin cut structures1 Oct 2026US 2026/0304927 A1Intel Corporation
- Integrated circuit devices including stacked transistors with through-epi connectivity24 Sep 2026US 2026/0293649 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Double level polysilicon series transistor cell240US 4,213,139 ATexas Instruments Incorporated · 1980
- Semiconductor device cell having regularly sized and arranged features176US 6,635,935 B2Mitsubishi Denki Kabushiki Kaisha · 2003
- Edge termination of semiconductor devices for high voltages with resistive voltage divider116US 6,365,930 B1STMicroelectronics S,r.l. · 2002
- Semiconductor device110US 8,130,529 B2Fujitsu Semiconductor Limited · 2012
- Work function tuning for MOSFET gate electrodes106US 6,373,111 B1Intel Corporation · 2002