Semiconductor device

A semiconductor device comprising:

• a semiconductor chip which has a main surface;
• and
• a main transistor which includes a first system transistor and a second system transistor that are each formed in the main surface so as to be individually controlled;
• wherein the first system transistor includes a first composite cell which is constituted of an α-number (α≥2) of first unit transistors that are arrayed so as to be mutually adjacent to the main surface and that each have a first trench structure including a first electrode embedded in a first trench formed in the main surface,
• the second system transistor includes a second composite cell which is arranged so as to be adjacent to the first composite cell and constituted of a β-number (β≥2) of second unit transistors that are arrayed so as to be mutually adjacent to the main surface and that each have a second trench structure including a second electrode embedded in a second trench formed in the main surface,
• the first electrode is embedded at an interval of not less than 2500 Å and not more than 4500 Å from the main surface to a bottom wall side of the first trench, and
• the second electrode is embedded at an interval of not less than 2500 Å and not more than 4500 Å from the main surface to a bottom wall side of the second trench.