Edge termination of semiconductor devices for high voltages with resistive voltage divider
AssigneeSTMicroelectronics S.r.l.
InventorsAntonino Schillaci, Antonio Grimaldi, Giuseppe Ferla
Life of this patent
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Abstract
Semiconductor device for high voltages including at least one power component and at least one edge termination. The edge termination includes a voltage divider including a plurality of MOS transistors in series, and the edge termination is connected between non-driveble terminals of said power component.
Claims7
Semiconductor device for high voltages comprising at least one power component and at least one edge termination wherein said edge termination comprises a voltage divider including a plurality of MOS transistors in series, and said edge termination being connected between non-drivable terminals of said power component.
Dependencies are inferred from the claim text.