Semiconductor devices with gate cut structures integrated with fin cut structures

An electronic device, comprising:

• a chip package comprising one or more dies, at least one of the one or more dies comprising
• a semiconductor device comprising a semiconductor region extending from a source or drain region in a first direction, and a gate structure extending over the semiconductor region in a second direction substantially orthogonal to the first direction;
• a first dielectric structure extending along the first direction and crossing the gate structure such that the first dielectric structure extends through at least an entire thickness of the gate structure;
• a second dielectric structure extending along the first direction and crossing the gate structure such that the second dielectric structure extends through at least an entire thickness of the gate structure;
• and
• a third dielectric structure extending along the second direction parallel to the gate structure and intersecting the first dielectric structure and the second dielectric structure, wherein the first dielectric structure, the second dielectric structure, and the third dielectric structure share a same continuous dielectric material.

An integrated circuit comprising:

• a semiconductor region extending from a first source or drain region in a first direction;
• a gate structure extending over the semiconductor region in a second direction substantially orthogonal to the first direction;
• and
• a dielectric structure comprising
• a first section that extends along the first direction and crosses the gate structure such that the first section of the dielectric structure extends through at least an entire thickness of the gate structure, and
• a second section that extends along the second direction parallel to the gate structure and intersects the first section of the dielectric structure, wherein the dielectric structure comprises a dielectric material that seamlessly extends between the first section and the second section.