Semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorTakuji Tanaka
Life of this patent
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Abstract
A semiconductor device has a pair of gate electrodes extending adjacent to and non-parallel to each other, a source and/or drain region located between the pair of gate electrodes for forming a pair of transistors with the gate electrodes, and a contact electrode disposed between the pair of gate electrodes in contact with the source and/or drain region in a contact area so that the center of the contact area is shifted from the center of the source and/or drain region in a direction along which the distance between the pair of gate electrodes becomes greater.
Claims14
A semiconductor device comprising:
- a pair of gate electrodes extending adjacent to and non-parallel to each other;
- a source and/or drain region located between the pair of gate electrodes for forming a pair of transistors with the gate electrodes;
- and
- a contact electrode disposed between the pair of gate electrodes in contact with the source and/or drain region in a contact area so that a center of the contact area is shifted from the center of the source and/or drain region in a direction along which a distance between the pair of gate electrodes becomes greater.
A semiconductor device comprising:
- an SRAM unit cell having a driver transistor;
- a transfer transistor;
- and
- a load element;
- wherein a pair of gate electrodes extends adjacent to and non-parallel to each other, the pair of gate electrodes including the gate electrode of one of the driver transistor and the transfer transistor,
- wherein a source and/or drain region locates between the pair of gate electrodes for forming the driver transistor and the transfer transistor with the gate electrodes, the source and/or drain region being commonly shared by the transistors, and
- wherein a contact electrode is disposed between the pair of gate electrodes in contact with the source and/or drain region in a contact area so that a center of the contact area is shifted from the center of the source and/or drain region in a direction along which a distance between the pair of gate electrodes becomes greater.
A semiconductor device comprising:
- an SRAM unit cell having a driver transistor;
- a transfer transistor;
- and
- a load transistor;
- wherein a pair of gate electrodes extends adjacent to and non-parallel to each other, the pair of gate electrodes including gate electrodes of the load transistors on adjacent unit cells,
- wherein a source and/or drain region is located between the pair of gate electrodes for forming the driver transistor and the transfer transistor with the gate electrodes, the source and/or drain region being commonly shared by the load transistors of adjacent unit cells, and
- wherein a contact electrode is disposed between the pair of gate electrodes in contact with the source and/or drain region in a contract area so that a center of the contact area is shifted from the center of the source and/or drain region in a direction along which a distance between the pair of gate electrodes becomes greater.
Dependencies are inferred from the claim text.