H10D 84/83138
The igfets characterised by having different shapes or dimensions of their gate
Official title: {the IGFETs characterised by having different shapes or dimensions of their gate conductors}
H10D84/83138 (The igfets characterised by having different shapes or dimensions of their gate) appears on 1,401 US grants and 1,717 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,401
- Published applications
- 1,717
- Assignees
- 206
- Inventors
- 2,375
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 5 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 3 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 6 | 0 |
| 1998 | 5 | 0 |
| 1999 | 9 | 0 |
| 2000 | 10 | 0 |
| 2001 | 4 | 3 |
| 2002 | 8 | 14 |
| 2003 | 6 | 8 |
| 2004 | 9 | 13 |
| 2005 | 8 | 13 |
| 2006 | 12 | 19 |
| 2007 | 9 | 15 |
| 2008 | 8 | 23 |
| 2009 | 10 | 26 |
| 2010 | 24 | 16 |
| 2011 | 20 | 13 |
| 2012 | 15 | 17 |
| 2013 | 22 | 38 |
| 2014 | 36 | 44 |
| 2015 | 47 | 81 |
| 2016 | 83 | 85 |
| 2017 | 85 | 98 |
| 2018 | 90 | 98 |
| 2019 | 102 | 127 |
| 2020 | 120 | 143 |
| 2021 | 116 | 109 |
| 2022 | 88 | 153 |
| 2023 | 98 | 173 |
| 2024 | 121 | 168 |
| 2025 | 143 | 135 |
| 2026 | 46 | 85 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- Double level polysilicon series transistor cell240US 4,213,139 ATexas Instruments Incorporated · 1980
- Semiconductor integrated circuit device166US 7,016,214 B2Hitachi, Ltd. · 2006
- Strained nanowire CMOS device and method of forming157US 9,853,101 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Semiconductor device, module, and electronic device including a conversion circuit having a second switch rendered conductive together with a first switch155US 7,608,810 B2Rohm Co., Ltd. · 2009
- Method for forming stacked nanowire transistors153US 10,032,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018