Integrated circuits having heterogeneous devices therein and methods of designing the same
AssigneeSamsung Electronics Co., Ltd.
InventorJungho Do
Life of this patent
Estimating the term…
Abstract
An integrated circuit includes: (i) a first transistor having a first gate extending in a first direction, a first drain, and a first source that is separated from the first drain in a second direction, which is perpendicular to the first direction, (ii) a second transistor having a second gate extending in one of the first and second directions, a second drain, and a second source that is separated from the second drain in a third direction, which is perpendicular to the first and second directions, and (iii) a first connection structure that electrically connects the first transistor to the second transistor, and includes a pattern extending in the first direction between the first transistor and the second transistor.
Claims20
An integrated circuit comprising:
- a first transistor including a first gate extending in a first direction, a first drain, and a first source that is separated from the first drain in a second direction, which is perpendicular to the first direction;
- a second transistor including a second gate extending in one of the first and second directions, a second drain, and a second source that is separated from the second drain in a third direction, which is perpendicular to the first and second directions;
- and
- a first connection structure that electrically connects the first transistor to the second transistor, and includes a pattern extending in the second direction between the first transistor and the second transistor,
- wherein the pattern overlaps with one of the first drain and the first source of the first transistor in the third direction and the pattern overlaps with the second gate of the second transistor in the third direction, and
- wherein the first transistor corresponds to a lateral transistor and the second transistor corresponds to a vertical transistor.
An integrated circuit, comprising:
- a first transistor including a first gate extending in a first direction, a first drain, and a first source that is separated from the first drain in a second direction, which is perpendicular to the first direction;
- a second transistor including a second gate extending in one of the first and second directions, a second drain, and a second source that is separated from the second drain in a third direction, which is perpendicular to the first and second directions;
- and
- a first connection structure that electrically connects the first transistor to the second transistor, said first connection structure including a first contact extending in the third direction between the first transistor and the second transistor,
- wherein the second source and the second drain overlap with one of the first source and the first drain in the third direction, and
- wherein the first transistor corresponds to a lateral transistor and the second transistor corresponds to a vertical transistor.
An integrated circuit, comprising:
- a first transistor including a first gate extending in a first direction, a first drain, and a first source that is separated from the first drain in a second direction, which is perpendicular to the first direction;
- a second transistor including a second gate extending in one of the first and second directions, a second drain, and a second source that is separated from the second drain in a third direction, which is perpendicular to the first and second directions;
- and
- a first connection structure configured to electrically connect the first transistor to the second transistor,
- wherein the first transistor corresponds to a lateral transistor and the second transistor corresponds to a vertical transistor, and
- wherein the first gate of the first transistor and the second gate of the second transistor are electrically connected.
Dependencies are inferred from the claim text.