H10D 84/84
Combinations of enhancement-mode igfets and depletion-mode igfets
Official title: Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
H10D84/84 (Combinations of enhancement-mode igfets and depletion-mode igfets) appears on 525 US grants and 524 published applications in this corpus.
Search patents in H10D- Granted patents
- 525
- Published applications
- 524
- Assignees
- 194
- Inventors
- 819
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 7 | 0 |
| 1978 | 8 | 0 |
| 1979 | 5 | 0 |
| 1980 | 6 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 5 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 6 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 3 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 1 |
| 2002 | 2 | 6 |
| 2003 | 3 | 2 |
| 2004 | 3 | 1 |
| 2005 | 3 | 7 |
| 2006 | 3 | 4 |
| 2007 | 4 | 5 |
| 2008 | 4 | 6 |
| 2009 | 3 | 5 |
| 2010 | 8 | 17 |
| 2011 | 8 | 16 |
| 2012 | 10 | 10 |
| 2013 | 15 | 20 |
| 2014 | 19 | 32 |
| 2015 | 40 | 40 |
| 2016 | 38 | 52 |
| 2017 | 42 | 38 |
| 2018 | 37 | 31 |
| 2019 | 33 | 46 |
| 2020 | 47 | 50 |
| 2021 | 24 | 26 |
| 2022 | 35 | 23 |
| 2023 | 23 | 17 |
| 2024 | 22 | 30 |
| 2025 | 17 | 27 |
| 2026 | 9 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Half-bridge circuit using monolithic flip-chip GAN power devices6 Oct 2026US 12,756,203 B2Navitas Semiconductor Limited
- Physical unclonable function device and method29 Sep 2026US 12,748,896 B2STMicroelectronics (Rousset) SAS
- Planar MOSFET with light, regular and heavily doped regions11 Aug 2026US 12,707,668 B2Invention And Collaboration Laboratory Pte. Ltd.
- Semiconductor device11 Aug 2026US 12,707,710 B2Fuji Electric Co., Ltd.
- Semiconductor device and method for fabricating the same7 Jul 2026US 12,677,473 B2United Microelectronics Corp.
- Semiconductor device and method for fabricating the same24 Sep 2026US 2026/0293278 A1United Microelectronics Corp.
- Semiconductor device and method for fabricating the same17 Sep 2026US 2026/0282513 A1United Microelectronics Corp.
- Semiconductor device and method for fabricating the same17 Sep 2026US 2026/0282538 A1United Microelectronics Corp.
- Semiconductor process for simultaneously forming a semiconductor structure with features of d-mode and e-mode gan devices10 Sep 2026US 2026/0271386 A1United Microelectronics Corp.
- Group iii-v power semiconductor device and method of manufacturing same4 Jun 2026US 2026/0156929 A1DB HiTek Co., Ltd.
Most cited
By later US patents
- Buried channel strained silicon FET using a supply layer created through ion implantation147US 6,555,839 B2AmberWave Systems Corporation · 2003
- Inverter, logic circuit including an inverter and methods of fabricating the same130US 7,847,287 B2Samsung Electronics Co., Ltd. · 2010
- Fabrication of semiconductor structure having N-channel channel-junction field-effect transistor105US 7,595,243 B1National Semiconductor Corporation · 2009
- Semiconductor device and manufacturing method thereof102US 8,421,068 B2Semiconductor Energy Laboratory Co.Ltd. · 2013
- Buried channel strained silicon FET using a supply layer created through ion implantation88US 6,593,191 B2AmberWave Systems Corporation · 2003