Semiconductor device

A semiconductor device comprising:

• a semiconductor base body of a first conductivity-type;
• a first well region of a second conductivity-type provided in the semiconductor base body;
• at least one second well region of the first conductivity-type implementing a part of a high-side circuit provided in the first well region;
• a buried layer of the second conductivity-type provided at a bottom of the first well region and having a higher impurity concentration than the first well region;
• a voltage blocking region of the second conductivity-type provided at a circumference of the first well region;
• and
• an extraction region of the first conductivity-type provided to have a greater depth than the at least one second well region at least at a part of a circumference of the high-side circuit in the first well region so as to be opposed to the at least one second well region,
• wherein the extraction region has a loop-shaped planar pattern surrounding the circumference of the high-side circuit.

A semiconductor device comprising:

• a semiconductor base body of a first conductivity-type;
• a first well region of a second conductivity-type provided in the semiconductor base body;
• at least one second well region of the first conductivity-type implementing a part of a high-side circuit provided in the first well region;
• a buried layer of the second conductivity-type provided at a bottom of the first well region and having a higher impurity concentration than the first well region;
• a voltage blocking region of the second conductivity-type provided at a circumference of the first well region;
• and
• an extraction region of the first conductivity-type provided to have a greater depth than the at least one second well region at least at a part of a circumference of the high-side circuit in the first well region so as to be opposed to the at least one second well region,
• wherein a level shifter is provided in a part of the voltage blocking region.