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US 2026/0293278 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsPo-Kuang Hsieh, Chien-Ting Lin, Ssu-I Fu, Chin-Hung Chen
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Abstract
A method for fabricating a semiconductor device includes the steps of providing a substrate having a low-voltage (LV) region and a medium-voltage (MV) region, forming a first metal gate on the LV region and a second metal gate on the MV region, forming a first patterned mask on the second metal gate, removing part of the first metal gate, forming a second patterned mask on the first metal gate, removing part of the second metal gate, and then forming a first hard mask on the first metal gate and a second hard mask on the second metal gate.
Claims8
A semiconductor device, comprising:
- a substrate having a medium-voltage (MV) region and a low-voltage (LV) region;
- a first gate structure on the LV region and a second gate structure on the MV region;
- and
- a first hard mask on the first gate structure and a second hard mask on the second gate structure, wherein the first hard mask and the second hard mask comprise different thicknesses and sidewalls of the first gate structure and the first hard mask are aligned.
1 more element
Dependencies are inferred from the claim text.