Back to results
US 12,677,473 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsPo-Kuang Hsieh, Chien-Ting Lin, Ssu-I Fu, Chin-Hung Chen
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor device includes the steps of providing a substrate having a low-voltage (LV) region and a medium-voltage (MV) region, forming a first metal gate on the LV region and a second metal gate on the MV region, forming a first patterned mask on the second metal gate, removing part of the first metal gate, forming a second patterned mask on the first metal gate, removing part of the second metal gate, and then forming a first hard mask on the first metal gate and a second hard mask on the second metal gate.
Claims8
A semiconductor device, comprising:
- a substrate having a medium-voltage (MV) region and a low-voltage (LV) region;
- a first gate structure on the LV region and a second gate structure on the MV region, wherein a bottom surface of the first gate structure is even with a bottom surface of the second gate structure;
- and
- a first hard mask on the first gate structure and a second hard mask on the second gate structure, wherein the first hard mask and the second hard mask comprise different thicknesses.
1 more element
Dependencies are inferred from the claim text.