H10D 84/836
Comprising edmos
Official title: {comprising EDMOS}
H10D84/836 (Comprising edmos) appears on 199 US grants and 207 published applications in this corpus.
Search patents in H10D- Granted patents
- 199
- Published applications
- 207
- Assignees
- 97
- Inventors
- 402
- Latest grant
- 3 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 5 | 0 |
| 1998 | 4 | 0 |
| 1999 | 5 | 0 |
| 2000 | 1 | 0 |
| 2001 | 4 | 5 |
| 2002 | 5 | 4 |
| 2003 | 6 | 6 |
| 2004 | 3 | 5 |
| 2005 | 4 | 3 |
| 2006 | 3 | 8 |
| 2007 | 2 | 2 |
| 2008 | 1 | 8 |
| 2009 | 6 | 9 |
| 2010 | 5 | 5 |
| 2011 | 4 | 4 |
| 2012 | 10 | 3 |
| 2013 | 5 | 7 |
| 2014 | 7 | 12 |
| 2015 | 10 | 12 |
| 2016 | 12 | 13 |
| 2017 | 15 | 17 |
| 2018 | 15 | 10 |
| 2019 | 9 | 8 |
| 2020 | 9 | 6 |
| 2021 | 8 | 10 |
| 2022 | 4 | 7 |
| 2023 | 5 | 13 |
| 2024 | 8 | 6 |
| 2025 | 9 | 14 |
| 2026 | 2 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with trench isolation structures in a transition region and method of manufacturing3 Mar 2026US 12,568,646 B2Infineon Technologies Austria AG
- Rugged LDMOS with reduced NSD in source10 Feb 2026US 12,550,366 B2Texas Instruments Incorporated
- High voltage field effect transistors with different sidewall spacer configurations and method of making the same28 Oct 2025US 12,457,786 B2SanDisk Technologies LLC
- High-voltage Schmitt trigger21 Oct 2025US 12,451,875 B2GLOBALFOUNDRIES U. S. Inc.
- NMOS half-bridge power device and manufacturing method thereof2 Sep 2025US 12,408,371 B2Richtek Technology Corporation
- Rugged ldmos with reduced nsd in source18 Jun 2026US 2026/0173441 A1
- Semiconductor structure28 May 2026US 2026/0150372 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Isolation structure for n epitaxy-based silicon carbide device, and n epitaxy-based silicon carbide high and low voltage integrated device and preparation method therefor30 Apr 2026US 2026/0123035 A1Southeast University
- Semiconductor device including high voltage device26 Mar 2026US 2026/0090009 A1
- High voltage semiconductor devices with offset drain26 Feb 2026US 2026/0059796 A1Avago Technologies International Sales Pte. Limited
Most cited
By later US patents
- Process for the simultaneous fabrication of high-and-low-voltage semiconductor devices, integrated circuit containing the same, systems and methods82US 5,296,393 ATexas Instruments Incorporated · 1994
- Semiconductor device having non-power enhanced and power enhanced metal oxide semiconductor devices and a method of manufacture therefor81US 6,541,819 B2Agere Systems Inc. · 2003
- Integrated circuit structure comprising CMOS transistors having high blocking voltage capability and method of fabrication of said structure67US 4,628,341 AThomson-CSF · 1986
- High-breakdown-voltage semiconductor device56US 5,932,897 AKabushiki Kaisha Toshiba · 1999
- MOS uni-directional, differential voltage amplifier capable of amplifying signals having input common-mode voltage beneath voltage of lower supply and integrated circuit substrate53US 5,463,347 ATexas Instruments Incorporated · 1995