Semiconductor device having non-power enhanced and power enhanced metal oxide semiconductor devices and a method of manufacture therefor
AssigneeAgere Systems Inc.
InventorsAshraf W. Lotfi, Jian Tan
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Abstract
The present invention provides a semiconductor device and a method of manufacture therefor. The semiconductor device includes a non-power enhanced metal oxide semiconductor (non-PEMOS) device having first source/drain regions located in a semiconductor substrate, wherein the first source/drain regions include a first dopant profile. The semiconductor device further includes a power enhanced metal oxide semiconductor (PEMOS) device located adjacent the non-PEMOS device and having second source/drain regions located in the semiconductor substrate, wherein the second source/drain regions include the first dopant profile.
Claims9
A semiconductor device, comprising:
- a non-power enhanced metal oxide semiconductor (non-PEMOS) device having first source/drain regions located in a semiconductor substrate, wherein the first source/drain regions include a first dopant profile, and wherein the non-PEMOS device has a first gate oxide having a thickness;
- and
- a power enhanced metal oxide semiconductor (PEMOS) device located adjacent the non-PEMOS device and having second source/drain regions located in the semiconductor substrate, wherein the second source/drain regions include the first dopant profile, and wherein the PEMOS device has a second gate oxide having the thickness.
Dependencies are inferred from the claim text.