Semiconductor device with trench isolation structures in a transition region and method of manufacturing

A method of forming a semiconductor device, the method comprising:

• forming a semiconductor layer comprising an element region, wherein the element region comprises an inner region, an outer region on opposite sides of the inner region, and a transition region laterally separating the inner region and the outer region;
• forming an electronic element comprising a first doped region formed in the inner region and a second doped region formed in the outer region, wherein the electronic element is configured to temporarily block a voltage applied between the first doped region and the second doped region;
• forming laterally separated trenches extending from a first surface of the semiconductor layer into the transition region;
• and
• forming trench isolation structures in the trenches such that at least some of the trench isolation structures are fully surrounded by the transition region.

A semiconductor device, comprising:

• a semiconductor layer comprising an element region, wherein the element region comprises an inner region, an outer region on opposite sides of the inner region, and a transition region laterally separating the inner region and the outer region;
• an electronic element comprising a first doped region formed in the inner region and a second doped region formed in the outer region;
• and
• laterally separated trench isolation structures at least in the transition region, wherein each trench isolation structure extends from a first surface of the semiconductor layer into the semiconductor layer, and
• wherein a vertical extension of at least some of the trench isolation structures is greater than a vertical extension of the first doped region and a vertical extension of the second doped region.

A semiconductor device, comprising:

• a semiconductor layer comprising an element region, wherein the element region comprises an inner region, an outer region on opposite sides of the inner region, and a transition region laterally separating the inner region and the outer region;
• an electronic element comprising a first doped region formed in the inner region and a second doped region formed in the outer region;
• laterally separated trench isolation structures at least in the transition region;
• and
• intrinsic recombination centers formed in the semiconductor layer in a layer portion along an interface between the trench isolation structures and the semiconductor layer and/or interface recombination centers formed along the interface between the trench isolation structures and the semiconductor layer,
• wherein each trench isolation structure extends from a first surface of the semiconductor layer into the semiconductor layer.