Semiconductor device including high voltage device

Abstract

A semiconductor device includes a high voltage device. The high voltage device includes a central region with a first inner region. A termination area laterally surrounds the central portion and includes a first extension region. The first extension region is formed between the first inner region and a first outer region. A lightly doped base portion and the extension region form a pn junction. The central region further includes a second inner region. The second inner region and the first inner region are laterally separated and connected to different inner contact structures. Alternatively or in addition, the high voltage device further includes a second outer region, with the first outer region and the second outer region being laterally separated and connected to different outer contact structures.

Dependencies are inferred from the claim text.