H10D 84/0126
The components including insulated gates
Official title: {the components including insulated gates, e.g. IGFETs}
H10D84/0126 (The components including insulated gates) appears on 33,126 US grants and 38,262 published applications in this corpus.
Search patents in H10D- Granted patents
- 33,126
- Published applications
- 38,262
- Assignees
- 1,736
- Inventors
- 24,550
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 18 | 0 |
| 1978 | 17 | 0 |
| 1979 | 12 | 0 |
| 1980 | 17 | 0 |
| 1981 | 18 | 0 |
| 1982 | 12 | 0 |
| 1983 | 21 | 0 |
| 1984 | 36 | 0 |
| 1985 | 25 | 0 |
| 1986 | 39 | 0 |
| 1987 | 48 | 0 |
| 1988 | 49 | 0 |
| 1989 | 47 | 0 |
| 1990 | 52 | 0 |
| 1991 | 64 | 0 |
| 1992 | 63 | 0 |
| 1993 | 64 | 0 |
| 1994 | 70 | 0 |
| 1995 | 80 | 0 |
| 1996 | 116 | 0 |
| 1997 | 131 | 0 |
| 1998 | 204 | 0 |
| 1999 | 303 | 0 |
| 2000 | 400 | 0 |
| 2001 | 429 | 166 |
| 2002 | 484 | 531 |
| 2003 | 506 | 531 |
| 2004 | 500 | 673 |
| 2005 | 476 | 905 |
| 2006 | 580 | 1018 |
| 2007 | 574 | 1086 |
| 2008 | 634 | 1209 |
| 2009 | 691 | 996 |
| 2010 | 933 | 942 |
| 2011 | 920 | 875 |
| 2012 | 804 | 995 |
| 2013 | 1014 | 1122 |
| 2014 | 1186 | 1259 |
| 2015 | 1390 | 1669 |
| 2016 | 1786 | 1822 |
| 2017 | 1953 | 1931 |
| 2018 | 1966 | 1929 |
| 2019 | 2081 | 2069 |
| 2020 | 2104 | 2495 |
| 2021 | 1805 | 2109 |
| 2022 | 1695 | 2418 |
| 2023 | 1709 | 2585 |
| 2024 | 1895 | 2677 |
| 2025 | 1957 | 2650 |
| 2026 | 1139 | 1600 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 84/0165The components including complementary igfets18,814
- H10D 84/0158The components including finfets7,913
- H10D 84/0135Manufacturing their gate conductors5,257
- H10D 84/0151Manufacturing their isolation regions4,964
- H10D 84/013Manufacturing their source or drain regions4,475
- H10D 84/0149Manufacturing their interconnections or electrodes3,835
- H10D 84/0128Manufacturing their channels3,129
- H10D 84/0144Manufacturing their gate insulating layers2,168
Recent patents
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- Semiconductor structure and method for forming the same6 Oct 2026US 12,757,440 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contact formation with staggered gate patterning6 Oct 2026US 12,757,441 B2International Business Machines Corporation
- Integrated circuit and method of forming the same8 Oct 2026US 2026/0312572 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Physically unclonable function (puf) generation8 Oct 2026US 2026/0312831 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
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Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- System and methods for converting planar design to FinFET design1,326US 8,816,444 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014