H10D 84/0147
Manufacturing their gate sidewall spacers
Official title: {Manufacturing their gate sidewall spacers}
H10D84/0147 (Manufacturing their gate sidewall spacers) appears on 1,880 US grants and 2,146 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,880
- Published applications
- 2,146
- Assignees
- 189
- Inventors
- 2,638
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 4 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 5 | 0 |
| 1998 | 4 | 0 |
| 1999 | 13 | 0 |
| 2000 | 13 | 0 |
| 2001 | 21 | 4 |
| 2002 | 27 | 25 |
| 2003 | 22 | 29 |
| 2004 | 34 | 36 |
| 2005 | 27 | 30 |
| 2006 | 30 | 40 |
| 2007 | 21 | 39 |
| 2008 | 22 | 40 |
| 2009 | 24 | 34 |
| 2010 | 27 | 16 |
| 2011 | 29 | 30 |
| 2012 | 24 | 47 |
| 2013 | 43 | 34 |
| 2014 | 35 | 54 |
| 2015 | 49 | 71 |
| 2016 | 79 | 83 |
| 2017 | 105 | 122 |
| 2018 | 146 | 148 |
| 2019 | 149 | 123 |
| 2020 | 163 | 209 |
| 2021 | 117 | 171 |
| 2022 | 136 | 191 |
| 2023 | 144 | 183 |
| 2024 | 151 | 150 |
| 2025 | 141 | 169 |
| 2026 | 68 | 68 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Contact formation with staggered gate patterning6 Oct 2026US 12,757,441 B2International Business Machines Corporation
- Semiconductor structure and method of manufacturing the same6 Oct 2026US 12,757,723 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and formation method of semiconductor device with power rail29 Sep 2026US 12,751,029 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contact structure with arched top surface and fabrication method thereof29 Sep 2026US 12,751,039 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including backside source/drain contact structure with contact spacer and backside gate contact structure15 Sep 2026US 12,740,122 B2Samsung Electronics Co., Ltd.
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming a nano-fet semiconductor device8 Oct 2026US 2026/0314014 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor isolation structures8 Oct 2026US 2026/0314046 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of forming the same1 Oct 2026US 2026/0304865 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Wrap around silicide for FinFETs236US 9,418,897 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of manufacturing semiconductor local interconnect and contact198US 6,884,712 B2Chartered Semiconductor Manufacturing Ltd. · 2005
- Self-aligned source/drain MOS process186US 5,439,839 AWinbond Electronics Corp. · 1995
- Method of fabricating a MOS device having a gate-side air-gap structure136US 5,736,446 APowerchip Semiconductor Corp. · 1998