H10D 84/0123
Integrating together multiple components covered by h10d12/00 or h10d30/00
Official title: {Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs}
H10D84/0123 (Integrating together multiple components covered by h10d12/00 or h10d30/00) appears on 33,269 US grants and 38,434 published applications in this corpus.
Search patents in H10D- Granted patents
- 33,269
- Published applications
- 38,434
- Assignees
- 1,756
- Inventors
- 24,754
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 18 | 0 |
| 1978 | 17 | 0 |
| 1979 | 12 | 0 |
| 1980 | 17 | 0 |
| 1981 | 18 | 0 |
| 1982 | 12 | 0 |
| 1983 | 21 | 0 |
| 1984 | 36 | 0 |
| 1985 | 25 | 0 |
| 1986 | 41 | 0 |
| 1987 | 48 | 0 |
| 1988 | 49 | 0 |
| 1989 | 48 | 0 |
| 1990 | 52 | 0 |
| 1991 | 64 | 0 |
| 1992 | 64 | 0 |
| 1993 | 67 | 0 |
| 1994 | 70 | 0 |
| 1995 | 81 | 0 |
| 1996 | 117 | 0 |
| 1997 | 133 | 0 |
| 1998 | 205 | 0 |
| 1999 | 304 | 0 |
| 2000 | 402 | 0 |
| 2001 | 431 | 166 |
| 2002 | 485 | 534 |
| 2003 | 507 | 531 |
| 2004 | 501 | 675 |
| 2005 | 478 | 908 |
| 2006 | 580 | 1018 |
| 2007 | 575 | 1086 |
| 2008 | 635 | 1214 |
| 2009 | 691 | 999 |
| 2010 | 936 | 944 |
| 2011 | 922 | 880 |
| 2012 | 809 | 1001 |
| 2013 | 1019 | 1132 |
| 2014 | 1194 | 1273 |
| 2015 | 1403 | 1681 |
| 2016 | 1798 | 1835 |
| 2017 | 1965 | 1937 |
| 2018 | 1975 | 1934 |
| 2019 | 2084 | 2074 |
| 2020 | 2108 | 2499 |
| 2021 | 1810 | 2116 |
| 2022 | 1704 | 2433 |
| 2023 | 1717 | 2596 |
| 2024 | 1906 | 2685 |
| 2025 | 1962 | 2664 |
| 2026 | 1144 | 1619 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device having an asymmetric fin-type patterns formed between two symmetric fin-type patterns with varying width along center vertical line of the fins6 Oct 2026US 12,757,368 B2Samsung Electronics Co., Ltd.
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,432 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure with butted-contact and methods of forming the same6 Oct 2026US 12,757,433 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same6 Oct 2026US 12,757,440 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contact formation with staggered gate patterning6 Oct 2026US 12,757,441 B2International Business Machines Corporation
- Integrated circuit and method of forming the same8 Oct 2026US 2026/0312572 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Physically unclonable function (puf) generation8 Oct 2026US 2026/0312831 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- System and methods for converting planar design to FinFET design1,326US 8,816,444 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014